SRAM devices, and electronic systems comprising SRAM devices

ABSTRACT

The invention includes SRAM constructions comprising at least one transistor device having an active region extending into a crystalline layer comprising Si/Ge. A majority of the active region within the crystalline layer is within a single crystal of the crystalline layer, and in particular aspects an entirety of the active region within the crystalline layer is within a single crystal of the crystalline layer. The SRAM constructions can be formed in semiconductor on insulator assemblies, and such assemblies can be supported by a diverse range of substrates, including, for example, glass, semiconductor substrates, metal, insulative materials, and plastics. The invention also includes electronic systems comprising SRAM constructions.

TECHNICAL FIELD

The invention pertains to static random access memory (SRAM) devices,and also pertains to electrical systems comprising SRAM devices.

BACKGROUND OF THE INVENTION

SOI technology differs from traditional bulk semiconductor technologiesin that the active semiconductor material of SOI technologies istypically much thinner than that utilized in bulk technologies. Theactive semiconductor material of SOI technologies will typically beformed as a thin film over an insulating material (typically oxide),with exemplary thicknesses of the semiconductor film being less than orequal to 2000 Å. In contrast, bulk semiconductor material will typicallyhave a thickness of at least about 200 microns. The thin semiconductorof SOI technology can allow higher performance and lower powerconsumption to be achieved in integrated circuits than can be achievedwith similar circuits utilizing bulk materials.

An exemplary integrated circuit device that can be formed utilizing SOItechnologies is a so-called thin film transistor (TFT), with the term“thin film” referring to the thin semiconductor film of the SOIconstruction. In particular aspects, the semiconductor material of theSOI construction can be silicon, and in such aspects the TFTs can befabricated using recrystallized amorphous silicon or polycrystallinesilicon. The silicon can be supported by an electrically insulativematerial (such as silicon dioxide), which in turn is supported by anappropriate substrate. Exemplary substrate materials include glass, bulksilicon and metal-oxides (such as, for example, Al₂O₃). If thesemiconductor material comprises silicon, the term SOI is occasionallyutilized to refer to a silicon-on-insulator construction, rather thanthe more general concept of a semiconductor-on-insulator construction.However, it is to be understood that in the context of this disclosurethe term SOI refers to semiconductor-on-insulator constructions.Accordingly, the semiconductor material of an SOI construction referredto in the context of this disclosure can comprise other semiconductivematerials in addition to, or alternatively to, silicon; including, forexample, germanium.

A problem associated with conventional TFT constructions is that grainboundaries and defects can limit carrier mobilities. Accordingly,carrier mobilities are frequently nearly an order of magnitude lowerthan they would be in bulk semiconductor devices. High voltage (andtherefore high power consumption), and large areas are utilized for theTFTs, and the TFTs exhibit limited performance. TFTs thus have limitedcommercial application and currently are utilized primarily for largearea electronics.

Various efforts have been made to improve carrier mobility of TFTs. Someimprovement is obtained for devices in which silicon is thesemiconductor material by utilizing a thermal anneal for grain growthfollowing silicon ion implantation and hydrogen passivation of grainboundaries (see, for example, Yamauchi, N. et al., “Drastically ImprovedPerformance in Poly-Si TFTs with Channel Dimensions Comparable to GrainSize”, IEDM Tech. Digest, 1989, pp. 353-356). Improvements have alsobeen made in devices in which a combination of silicon and germanium isthe semiconductor material by optimizing the germanium and hydrogencontent of silicon/germanium films (see, for example, King, T. J. et al,“A Low-Temperature (<=550° C.) Silicon-Germanium MOS TFT Technology forLarge-Area Electronics”, IEDM Tech. Digest, 1991, pp. 567-570).

Investigations have shown that nucleation, direction of solidification,and grain growth of silicon crystals can be controlled selectively andpreferentially by excimer laser annealing, as well as by lateralscanning continuous wave laser irradiation/anneal for recrystallization(see, for example, Kuriyama, H. et al., “High Mobility Poly-Si TFT by aNew Excimer Laser Annealing Method for Large Area Electronics”, IEDMTech. Digest, 1991, pp. 563-566; Jeon, J. H. et al., “A New Poly-Si TFTwith Selectively Doped Channel Fabricated by Novel Excimer LaserAnnealing”, IEDM Tech. Digest, 2000, pp. 213-216; Kim, C. H. et al., “ANew High-Performance Poly-Si TFT by Simple Excimer Laser Annealing onSelectively Floating a Si Layer”, IEDM Tech. Digest, 2001, pp. 753-756;Hara, A. et al, “Selective Single-Crystalline-Silicon Growth at thePre-Defined Active Regions of TFTs on a Glass by a Scanning CW LayerIrradiation”, IEDM Tech. Digest, 2000, pp. 209-212; and Hara, A. et al.,“High Performance Poly-Si TFTs on a Glass by a Stable Scanning CW LaserLateral Crystallization”, IEDM Tech. Digest, 2001, pp. 747-750). Suchtechniques have allowed relatively defect-free large crystals to begrown, with resulting TFTs shown to exhibit carrier mobility over 300cm²/V-second.

Another technique which has shown promise for improving carrier mobilityis metal-induced lateral recrystallization (MILC), which can be utilizedin conjunction with an appropriate high temperature anneal (see, forexample, Jagar, S. et al., “Single Grain TFT with SOI CMOS PerformanceFormed by Metal-Induced-Lateral-Crystallization”, IEDM Tech. Digest,1999, p. 293-296; and Gu, J. et al., “High Performance Sub-100 nm Si TFTby Pattern-Controlled Crystallization of Thin Channel Layer and HighTemperature Annealing”, DRC Conference Digest, 2002, pp. 49-50). Asuitable post-recrystallization anneal for improving the film qualitywithin silicon recrystallized by MILC is accomplished by exposingrecrystallized material to a temperature of from about 850° C. to about900° C. under an inert ambient (with a suitable ambient comprising, forexample, N₂). MILC can allow nearly single crystal silicon grains to beformed in predefined amorphous-silicon islands for device channelregions. Nickel-induced-lateral-recrystallization can allow deviceproperties to approach those of single crystal silicon.

The carrier mobility of a transistor channel region can be significantlyenhanced if the channel region is made of a semiconductor materialhaving a strained crystalline lattice (such as, for example, asilicon/germanium material having a strained lattice, or a siliconmaterial having a strained lattice) formed over a semiconductor materialhaving a relaxed lattice (such as, for example, a silicon/germaniummaterial having a relaxed crystalline lattice). (See, for example, Rim,K. et al., “Strained Si NMOSFETs for High Performance CMOS Technology”,VLSI Tech. Digest, 2001, p. 59-60; Cheng, Z. et al., “SiGe-On-Insulator(SGOI) Substrate Preparation and MOSFET Fabrication for ElectronMobility Evaluation” 2001 IEEE SOI Conference Digest, October 2001, pp.13-14; Huang, L. J. et al., “Carrier Mobility Enhancement in StrainedSi-on-Insulator Fabricated by Wafer Bonding”, VLSI Tech. Digest, 2001,pp. 57-58; and Mizuno, T. et al., “High Performance CMOS Operation ofStrained-SOI MOSFETs Using Thin Film SiGe-on-Insulator Substrate”, VLSITech. Digest, 2002, p. 106-107.)

The terms “relaxed crystalline lattice” and “strained crystallinelattice” are utilized to refer to crystalline lattices which are withina defined lattice configuration for the semiconductor material, orperturbed from the defined lattice configuration, respectively. Inapplications in which the relaxed lattice material comprisessilicon/germanium having a germanium concentration of from 10% to 60%,mobility enhancements of 110% for electrons and 60-80% for holes can beaccomplished by utilizing a strained lattice material in combinationwith the relaxed lattice material (see for example, Rim, K. et al.,“Characteristics and Device Design of Sub-100 nm Strained SiN andPMOSFETs”, VLSI Tech. Digest, 2002, 00. 98-99; and Huang, L. J. et al.,“Carrier Mobility Enhancement in Strained Si-on-Insulator Fabricated byWafer Bonding”, VLSI Tech. Digest, 2001, pp. 57-58).

Performance enhancements of standard field effect transistor devices arebecoming limited with progressive lithographic scaling in conventionalapplications. Accordingly, strained-lattice-channeled field effecttransistors on relaxed silicon/germanium offers an opportunity toenhance device performance beyond that achieved through conventionallithographic scaling. IBM recently announced the world's fastestcommunications chip following the approach of utilizing a strainedcrystalline lattice over a relaxed crystalline lattice (see, forexample, “IBM Builds World's Fastest Communications Microchip”, ReutersU.S. Company News, Feb. 25, 2002; and Markoff, J., “IBM Circuits are NowFaster and Reduce Use of Power”, The New York Times, Feb. 25, 2002).

Although various techniques have been developed for substantiallycontrolling nucleation and grain growth processes of semiconductormaterials, grain orientation control is lacking. Further, thepost-anneal treatment utilized in conjunction with MILC can beunsuitable in applications in which a low thermal budget is desired.Among the advantages of the invention described below is that such canallow substantial control of crystal grain orientation within asemiconductor material, while lowering thermal budget requirementsrelative to conventional methods. Additionally, the quality of the growncrystal formed from a semiconductor material can be improved relative tothat of conventional methods.

The methods described herein can be utilized in numerous applications,and in specific applications are utilized in forming static randomaccess memory (SRAM) devices.

FIG. 1 shows a prior art six transistor static read/write memory cell710 such as is typically used in high-density SRAMs. A static memorycell is characterized by operation in one of two mutually-exclusive andself-maintaining operating states. Each operating state defines one ofthe two possible binary bit values, zero or one. A static memory celltypically has an output which reflects the operating state of the memorycell. Such an output produces a “high” voltage to indicate a “set”operating state. The memory cell output produces a “low” voltage toindicate a “reset” operating state. A low or reset output voltageusually represents a binary value of zero, while a high or set outputvoltage represents a binary value of one.

Static memory cell 710 generally comprises first and second inverters712 and 714 which are cross-coupled to form a bistable flip-flop.Inverters 712 and 714 are formed by n-channel driver transistors 716 and717, and p-channel load transistors 718 and 719. In a standard bulksilicon implementation, driver transistors 716 and 717 are typicallyn-channel metal oxide silicon field effect transistors (MOSFETs) formedin an underlying silicon semiconductor substrate. P-channel loadtransistors 718 and 719 are typically arranged in a planar bulkimplementation, are formed to extend in an n-well adjacent the n-channelFETS, and are interconnected to the n-channel FETs in accordance withstandard CMOS technology.

The source regions of driver transistors 716 and 717 are tied to a lowreference or circuit supply voltage 715 (labeled V_(ss) in FIG. 1),which is typically referred to as “ground.” Load transistors 718 and 719are connected in series between a high reference or circuit supplyvoltage 711 (labeled V_(CC) in FIG. 1) and the drains of thecorresponding driver transistors 716 and 717, respectively. The gates ofload transistors 718 and 719 are connected to the gates of thecorresponding driver transistors 716 and 717 through interconnects 725and 727.

Inverter 712 has an inverter output 720 formed at the common node 731.Similarly, inverter 714 has an inverter output 722 at the common node733. Inverter 712 has an inverter input 725 at the common gate node,with the input 725 being connected to an interconnect 724. Inverter 714has an inverter input 727 at the common gate node, with the input 727being connected to an interconnect 726.

The inputs and outputs of inverters 712 and 714 are cross-coupled toform a flip-flop having a pair of complementary two-state outputs.Specifically, inverter output node 731 is cross-coupled to inverterinput node 727, and inverter output node 733 is cross-coupled toinverter input node 725. In this configuration, inverter outputs 720 and722 form the complementary two-state outputs of the flip-flop.

Node 731 represents the common node of electrical interconnectionbetween source/drain regions of CMOS transistor pairs 716 and 718 ofinverter 712. Similarly, node 733 represents the common node ofelectrical interconnection between the source/drain regions oftransistor pairs 717 and 719 of inverter 714. Nodes 731 and 733 can bereferred to as common node contacts. Similarly, nodes 725 and 727 can bereferred to as common gate contact nodes of the respective invertors 712and 714.

A memory flip-flop, such as that described, typically forms one memoryelement of an integrated array of static memory elements. A plurality ofaccess transistors, such as access transistors 730 and 732, are used toselectively address and access individual memory elements within thearray. Access transistor 730 has one active terminal connected tocross-coupled inverter output 720. Access transistor 732 has one activeterminal connected to cross-coupled inverter output 722. A plurality ofcomplementary column line pairs, such as the single pair ofcomplementary column lines 734 and 736 shown, are connected to theremaining active terminals of access transistors 730 and 732,respectively, at the shown nodes 713 and 721. Lines 734 and 736 can bereferred to as a bit line and an inverted bit line (bit-bar)respectively. A row line (also referred to as a wordline) 738 isconnected to the gate nodes of access transistors 730 and 732, at 718and 719, respectively.

Reading static memory cell 710 involves activating row line 738 toconnect inverter outputs 720 and 722 to column lines 734 and 736.Writing to static memory cell 710 involves first placing selectedcomplementary logic voltages on column lines 734 and 736, and thenactivating row line 738 to connect those logic voltages to inverteroutputs 720 and 722. This forces the outputs to the selected logic state“one” or “zero”, which will be maintained as long as power is suppliedto the memory cell, or until the memory cell is reprogrammed.

FIG. 2 shows an alternative four transistor, dual wordline, prior artstatic read/write memory cell 750 such as is typically used inhigh-density static random access memories. Static memory cell 750comprises n-channel pull down (driver) transistors 780 and 782 havingdrains respectively connected to pull up load elements or resistors 784and 786. Transistors 780 and 782 are typically n-channel metal oxidesilicon field effect transistors (NMOSFETs) formed in an underlyingsilicon semiconductor substrate.

The source regions of transistors 780 and 782 are tied to a lowreference or circuit supply voltage, labeled V_(SS) and typicallyreferred to as “ground.” Resistors 784 and 786 are respectivelyconnected in series between a high reference or circuit supply voltage,labeled V_(CC), and the drains of the corresponding transistors 780 and782. The common node 772 of the resistor(786)-transistor (782) pair isconnected to the gate of transistor 780 by line 776 for cross-coupling.Similarly, the common node 768 of the resistor (784)-transistor (780)pair is connected to the gate of transistor 782 for cross-coupling byline 774. Thus is formed a flip-flop having a pair of complementarytwo-state outputs.

A memory flip-flop, such as that of FIG. 2, typically forms one memoryelement of an integrated array of static memory elements. A plurality ofaccess transistors, such as access transistors 790 and 792, are used toselectively address and access individual memory elements within thearray. Access transistor 790 has one active terminal connected to thecommon node 768. Access transistor 792 has one active terminal connectedto the common node 772. A plurality of complementary column line pairs,such as the single pair of complementary column lines 752 and 754 shown,are connected to the remaining active terminals of access transistors790 and 792, respectively. A row line 756 is connected to the gates ofaccess transistors 790 and 792.

Reading static memory cell 750 involves activating row line 756 toconnect outputs 768 and 772 to column lines 752 and 754. Writing tostatic memory cell 750 involves first placing selected complementarylogic voltages on column lines 752 and 754, and then activating row line756 to connect those logic voltages to output nodes 768 and 772. Thisforces the outputs to the selected logic state “one” or “zero”, whichwill be maintained as long as power is supplied to the memory cell, oruntil the memory cell is reprogrammed. An advantage of thefour-transistor SRAM cell is lower power consumption while an advantageof the six-transistor SRAM cell is higher performance.

A static memory cell is said to be bistable because it has two stable orself-maintaining operating states, corresponding to two different outputvoltages. Without external stimuli, a static memory cell will operatecontinuously in a single one of its two operating states. It hasinternal feedback to maintain a stable output voltage, corresponding tothe operating state of the memory cell, as long as the memory cellreceives power.

The two possible output voltages produced by a static memory cellcorrespond generally to upper and lower circuit supply voltages.Intermediate output voltages, between the upper and lower circuit supplyvoltages, generally do not occur except for during brief periods ofmemory cell power-up and during transitions from one operating state tothe other operating state.

The operation of a static memory cell is in contrast to other types ofmemory cells such as dynamic cells which do not have stable operatingstates. A dynamic memory cell can be programmed to store a voltage whichrepresents one of two binary values, but requires periodic reprogrammingor “refreshing” to maintain this voltage for more than very short timeperiods.

A dynamic memory cell has no internal feedback to maintain a stableoutput voltage. Without refreshing, the output of a dynamic memory cellwill drift toward intermediate or indeterminate voltages, resulting inloss of data. Dynamic memory cells are used in spite of this limitationbecause of the significantly greater packaging densities which can beattained. For instance, a dynamic memory cell can be fabricated with asingle MOSFET transistor, rather than the four or more transistorstypically required in a static memory cell. Because of the significantlydifferent architectural arrangements and functional requirements ofstatic and dynamic memory cells and circuits, static memory design hasdeveloped along generally different paths than has the design of dynamicmemories. An SRAM cell is typically ten to twenty times larger than aDRAM cell and provides five to ten times greater performance than theDRAM counterpart, when such devices are built on conventional siliconsingle crystal substrates. It would be desirable to provide high speedyet dense SRAM memory cell constructions over a versatile substrate,such as, for example, glass, to extend application flexibility and toreduce cost.

SUMMARY OF THE INVENTION

In one aspect, the invention encompasses an SRAM construction. Theconstruction includes at least one transistor device having an activeregion extending into a crystalline layer comprising Si/Ge. A majorityof the active region within the crystalline layer is within a singlecrystal of the crystalline layer. In particular aspects, the SRAMconstruction comprises two resistors in combination with four transistordevices having active regions extending into crystalline Si/Ge. In yetother aspects the SRAM construction comprises six transistor deviceshaving active regions extending into the crystalline Si/Ge. The SRAMconstruction can be associated with a semiconductor on insulator (SOI)assembly, and in particular aspects the SOI assembly can be formed overany of a diverse range of substrates, including, for example, one ormore of glass, aluminum oxide, silicon dioxide, semiconductivematerials, and plastic.

In one aspect, the invention encompasses SRAM constructions whichinclude one or more CMOS inverters sharing a common gate between NFETdevices and PFET devices.

In particular aspects, the invention includes electronic systemscomprising SRAM constructions.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

FIG. 1 illustrates a circuit schematic of a prior art SRAM cell.

FIG. 2 illustrates a circuit schematic of a prior art SRAM celldifferent from the cell of FIG. 1.

FIG. 3 is a diagrammatic, cross-sectional view of a fragment of asemiconductor construction shown at a preliminary stage of an exemplaryprocess of the present invention.

FIG. 4 is a view of the FIG. 3 fragment shown at a processing stagesubsequent to that of FIG. 3.

FIG. 5 is a view of the FIG. 3 fragment shown at a processing stagesubsequent to that of FIG. 4.

FIG. 6 is a view of the FIG. 3 fragment shown at a processing stagesubsequent to that of FIG. 5.

FIG. 7 is a view of the FIG. 3 fragment shown at a processing stagesubsequent to that of FIG. 6.

FIG. 8 is a view of the FIG. 3 fragment shown at a processing stagesubsequent to that of FIG. 7.

FIG. 9 is an expanded region of the FIG. 8 fragment shown at aprocessing stage subsequent to that of FIG. 8 in accordance with anexemplary embodiment of the present invention, and shows an n-channeldevice.

FIG. 10 is a view of the FIG. 9 fragment shown at a processing stagesubsequent to that of FIG. 9.

FIG. 11 is a view of an expanded region of FIG. 8 shown at a processingstage subsequent to that of FIG. 8 in accordance with an alternativeembodiment relative to that of FIG. 9, and shows a p-channel device.

FIG. 12 is a diagrammatic, cross-sectional view of a semiconductorfragment illustrating an exemplary CMOS inverter construction inaccordance with an aspect of the present invention.

FIG. 13 is a diagrammatic, cross-sectional view of a semiconductorfragment illustrating another exemplary CMOS inverter construction.

FIG. 14 is a diagrammatic, cross-sectional view of a semiconductorfragment illustrating another exemplary CMOS inverter construction inaccordance with an aspect of the present invention.

FIG. 15 is a diagrammatic, cross-sectional view of a semiconductorfragment illustrating another exemplary CMOS inverter construction inaccordance with an aspect of the present invention.

FIG. 16 is a diagrammatic, cross-sectional view of a semiconductorfragment illustrating another exemplary CMOS inverter construction.

FIG. 17 is a diagrammatic, cross-sectional view of a semiconductorfragment illustrating an exemplary semiconductor construction comprisinga transistor and resistor.

FIG. 18 is a top cross-sectional view along the line 18-18 of theconstruction comprising the FIG. 17 fragment. The FIG. 17 cross-sectionis along the line 17-17 of FIG. 18.

FIG. 19 is a diagrammatic, fragmentary, top view of an exemplaryfour-transistor SRAM construction that can be formed in accordance withan aspect of the present invention.

FIG. 20 is a diagrammatic, cross-sectional view along the line 20-20 ofFIG. 19.

FIG. 21 is a diagrammatic, fragmentary, top view of an exemplary SRAMconstruction that can be formed in accordance with an aspect of thepresent invention.

FIG. 22 is a diagrammatic, fragmentary, top view of another exemplarySRAM that can be formed in accordance with an aspect of the presentinvention.

FIG. 23 is a diagrammatic, cross-sectional view of an exemplary SRAMconstruction that can be formed in accordance with an aspect of thepresent invention.

FIG. 24 is a diagrammatic view of a computer illustrating an exemplaryapplication of the present invention.

FIG. 25 is a block diagram showing particular features of themotherboard of the FIG. 24 computer.

FIG. 26 is a high-level block diagram of an electronic system accordingto an exemplary aspect of the present invention.

FIG. 27 is a simplified block diagram of an exemplary memory deviceaccording to an aspect of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The invention pertains to SRAM devices. Prior to the discussion of theexemplary SRAM devices of the invention, processing sequences forforming and utilizing preferred Si/Ge materials are described withreference to FIGS. 3-17.

Referring to FIG. 3, a fragment of a semiconductor construction 10 isillustrated at a preliminary processing stage. To aid in interpretationof the claims that follow, the terms “semiconductive substrate” and“semiconductor substrate” are defined to mean any constructioncomprising semiconductive material, including, but not limited to, bulksemiconductive materials such as a semiconductive wafer (either alone orin assemblies comprising other materials thereon), and semiconductivematerial layers (either alone or in assemblies comprising othermaterials). The term “substrate” refers to any supporting structure,including, but not limited to, the semiconductive substrates describedabove.

Construction 10 comprises a base (or substrate) 12 and an insulatorlayer 14 over the base. Base 12 can comprise, for example, one or moreof glass, aluminum oxide, silicon dioxide, metal and plastic.Additionally, and/or alternatively, base 12 can comprise a semiconductormaterial, such as, for example, a silicon wafer.

Layer 14 comprises an electrically insulative material, and inparticular applications can comprise, consist essentially of, or consistof silicon dioxide. In the shown construction, insulator layer 14 is inphysical contact with base 12. It is to be understood, however, thatthere can be intervening materials and layers provided between base 12and layer 14 in other aspects of the invention (not shown). For example,a chemically passive thermally stable material, such as silicon nitride(Si₃N₄), can be incorporated between base 12 and layer 14. Layer 14 canhave a thickness of, for example, from about 200 nanometers to about 500nanometers, and can be referred to as a buffer layer.

Layer 14 preferably has a planarized upper surface. The planarized uppersurface can be formed by, for example, chemical-mechanical polishing.

A layer 16 of semiconductive material is provided over insulator layer14. In the shown embodiment, semiconductive material layer 16 is formedin physical contact with insulator 14. Layer 16 can have a thickness of,for example, from about 5 nanometers to about 10 nanometers. Layer 16can, for example, comprise, consist essentially of, or consist of eitherdoped or undoped silicon. If layer 16 comprises, consists essentiallyof, or consists of doped silicon, the dopant concentration can be fromabout 10¹⁴ atoms/cm³ to about 10²⁰ atoms/cm³. The dopant can be eithern-type or p-type, or a combination of n-type and p-type.

The silicon utilized in layer 16 can be either polycrystalline siliconor amorphous silicon at the processing stage of FIG. 3. It can beadvantageous to utilize amorphous silicon in that it is typically easierto deposit a uniform layer of amorphous silicon than to deposit auniform layer of polycrystalline silicon.

Referring to FIG. 4, material 16 is patterned into a plurality ofdiscrete islands (or blocks) 18. Such can be accomplished utilizing, forexample, photoresist (not shown) and photolithographic processing,together with an appropriate etch of material 16.

A capping layer 20 is provided over islands 18 and over portions oflayer 14 exposed between the islands. Layer 20 can, for example,comprise, consist essentially of, or consist of one or both of silicondioxide and silicon. Layer 20 can also comprise multiple layers ofsilicon dioxide, stress-free silicon oxynitride, and silicon.

After formation of capping layer 20, small voids (nanovoids) and smallcrystals are formed in the islands 18. The formation of the voids andcrystals can be accomplished by ion implanting helium 22 into material16 and subsequently exposing material 16 to laser-emittedelectromagnetic radiation. The helium can aid in formation of thenanovoids; and the nanovoids can in turn aid in crystallization andstress relief within the material 16 during exposure to theelectromagnetic radiation. The helium can thus allow crystallization tooccur at lower thermal budgets than can be achieved without the heliumimplantation. The helium is preferably implanted selectively intoislands 18 and not into regions between the islands. The exposure ofconstruction 10 to electromagnetic radiation can comprise subjecting theconstruction to scanned continuous wave laser irradiation while theconstruction is held at an appropriate elevated temperature (typicallyfrom about 300° C. to about 450° C.). The exposure to theelectromagnetic radiation can complete formation of single crystal seedswithin islands 18. The laser irradiation is scanned along an axis 24 inthe exemplary shown embodiment.

The capping layer 20 discussed previously is optional, but canbeneficially assist in retaining helium within islands 18 and/orpreventing undesirable impurity contamination during the treatment withthe laser irradiation.

Referring to FIG. 5, islands 18 are illustrated after voids have beenformed therein. Additionally, small crystals (not shown) have also beenformed within islands 18 as discussed above.

Capping layer 20 (FIG. 4) is removed, and subsequently a layer 26 ofsemiconductive material is formed over islands 18. Layer 26 cancomprise, consist essentially of, or consist of silicon and germanium;or alternatively can comprise, consist essentially of, or consist ofdoped silicon/germanium. The germanium concentration within layer 26 canbe, for example, from about 10 atomic percent to about 60 atomicpercent. In the shown embodiment, layer 26 physically contacts islands18, and also physically contacts insulator layer 14 in gaps between theislands. Layer 26 can be formed to a thickness of, for example, fromabout 50 nanometers to about 100 nanometers, and can be formed utilizinga suitable deposition method, such as, for example, plasma-assistedchemical vapor deposition.

A capping layer 28 is formed over semiconductor layer 26. Capping layer28 can comprise, for example, silicon dioxide. Alternatively, cappinglayer 28 can comprise, for example, a combination of silicon dioxide andstress-free silicon oxynitride. Capping layer 28 can protect a surfaceof layer 26 from particles and contaminants that could otherwise fall onlayer 26. If the processing of construction 10 occurs in an environmentin which particle formation and/or incorporation of contaminants isunlikely (for example, an ultrahigh vacuum environment), layer 28 can beeliminated from the process. Layer 28 is utilized in the patterning of ametal (discussed below). If layer 28 is eliminated from the process,other methods besides those discussed specifically herein can beutilized for patterning the metal.

Referring to FIG. 6, openings 30 are extended through capping layer 28and to an upper surface of semiconductive material 26. Openings 30 canbe formed by, for example, photolithographic processing to pattern alayer of photoresist (not shown) into a mask, followed by a suitableetch of layer 28 and subsequent removal of the photoresist mask.

A layer 32 of metal-containing material is provided within openings 30,and in physical contact with an upper surface of semiconductive material26. Layer 32 can have a thickness of, for example, less than or equal toabout 10 nanometers. The material of layer 32 can comprise, consistessentially of, or consist of, for example, nickel. Layer 32 can beformed by, for example, physical vapor deposition. Layer 32 can beformed to be within openings 30 and not over material 28 (as isillustrated in FIG. 6) by utilizing deposition conditions whichselectively form metal-containing layer 32 on a surface of material 26relative to a surface of material 28. Alternatively, material 32 can bedeposited by a substantially non-selective process to form the material32 over the surface of material 28 as well as over the surface ofmaterial 26 within openings 30, and subsequently material 32 can beselectively removed from over surfaces of material 28 while remainingwithin openings 30. Such selective removal can be accomplished by, forexample, chemical-mechanical polishing, and/or by forming a photoresistmask (not shown) over the material 32 within openings 30, while leavingother portions of material 32 exposed, and subsequently removing suchother portions to leave only the segments of material 32 within openings30. The photoresist mask can then be removed.

Oxygen 34 is ion implanted through layers 26 and 28, and into layer 16to oxidize the material of layer 16. For instance, if layer 16 consistsof silicon, the oxygen can convert the silicon to silicon dioxide. Suchswells the material of layer 16, and accordingly fills the nanovoidsthat had been formed earlier. The oxygen preferably only partiallyoxidizes layer 16, with the oxidation being sufficient to fill all, orat least substantially all, of the nanovoids; but leaving at least someof the seed crystals within layer 16 that had been formed with the laserirradiation discussed previously. In some aspects, the oxidation canconvert a lower portion of material 16 to silicon dioxide while leavingan upper portion of material 16 as non-oxidized silicon.

The oxygen ion utilized as implant 34 can comprise, for example, oxygen(O₂) or ozone (O₃). The oxygen ion implant can occur before or afterformation of openings 30 and provision of metal-containing layer 32.

Construction 10 is exposed to continuous wave laser irradiation whilebeing held at an appropriate temperature (which can be, for example,from about 300° C. to about 450° C.; or in particular applications canbe greater than or equal to 550° C.) to cause transformation of at leastsome of layer 26 to a crystalline form. The exposure to the laserirradiation comprises exposing the material of construction 10 tolaser-emitted electromagnetic radiation scanned along a shown axis 36.Preferably, the axis 36 along which the laser irradiation is scanned isthe same axis that was utilized for scanning of laser irradiation in theprocessing stage of FIG. 4.

The crystallization of material 26 (which can also be referred to as arecrystallization of the material) is induced utilizing metal-containinglayer 32, and accordingly corresponds to an application of MILC. TheMILC transforms material 26 to a crystalline form and the seed layerprovides the crystallographic orientation while undergoing partialoxidation.

The crystal orientation within crystallized layer 26 can originate fromthe crystals initially formed in islands 18. Accordingly, crystalorientations formed within layer 26 can be controlled through control ofthe crystal orientations formed within the semiconductive material 16 ofislands 18.

The oxidation of part of material 16 which was described previously canoccur simultaneously with the MILC arising from continuous wave laserirradiation. Partial oxidation of seed layer 16 facilitates: (1) Geenrichment into Si—Ge layer 26 (which improves carrier mobility); (2)stress-relief of Si—Ge layer 26; and (3) enhancement ofrecrystallization of Si—Ge layer 26. The crystallization of material 26can be followed by an anneal of material 26 at a temperature of, forexample, about 900° C. for a time of about 30 minutes, or by anappropriate rapid thermal anneal, to further ensure relaxed, defect-freecrystallization of material 26. The annealing option can be dependent onthe thermal stability of the material selected for substrate 12.

FIG. 7 shows construction 10 after the processing described above withreference to FIG. 6. Specifically, the voids that had been in material16 are absent due to the oxidation of material 16. Also, semiconductivematerial 26 has been transformed into a crystalline material(illustrated diagrammatically by the cross-hatching of material 26 inFIG. 7). Crystalline material 26 can consist of a single large crystal,and accordingly can be monocrystalline. Alternatively, crystallinematerial 26 can be polycrystalline. If crystalline material 26 ispolycrystalline, the crystals of the material will preferably be equalin size or larger than the blocks 18. In particular aspects, eachcrystal of the polycrystalline material can be about as large as one ofthe shown islands 18. Accordingly, the islands can be associated in aone-to-one correspondence with crystals of the polycrystalline material.

The shown metal layers 32 are effectively in a one-to-one relationshipwith islands 18, and such one-to-one correspondence of crystals toislands can occur during the MILC. Specifically, single crystals can begenerated relative to each of islands 18 during the MILC processdescribed with reference to FIG. 6. It is also noted, however, thatalthough the metal layers 32 are shown in a one-to-one relationship withthe islands in the cross-sectional views of FIGS. 6 and 7, theconstruction 10 comprising the shown fragment should be understood toextend three dimensionally. Accordingly, the islands 18 and metal layers32 can extend in directions corresponding to locations into and out ofthe page relative to the shown cross-sectional view. There can beregions of the construction which are not shown where a metal layeroverlaps with additional islands besides the shown islands.

Referring to FIG. 8, layers 28 and 32 (FIG. 7) are removed, andsubsequently a layer 40 of crystalline semiconductive material is formedover layer 26. In typical applications, layer 26 will have a relaxedcrystalline lattice and layer 40 will have a strained crystallinelattice. As discussed previously, layer 26 will typically comprise bothsilicon and germanium, with the germanium being present to aconcentration of from about 10 atomic percent to about 60 atomicpercent. Layer 40 can comprise, consist essentially of, or consist ofeither doped or undoped silicon; or alternatively can comprise, consistessentially of, or consist of either doped or undoped silicon/germanium.If layer 40 comprises silicon/germanium, the germanium content can befrom about 10 atomic percent to about 60 atomic percent.

Strained lattice layer 40 can be formed by utilizing methods similar tothose described in, for example, Huang, L. J. et al., “Carrier MobilityEnhancement in Strained Si-on-Insulator Fabricated by Wafer Bonding”,VLSI Tech. Digest, 2001, pp. 57-58; and Cheng, Z. et al.,“SiGe-On-Insulator (SGOI) Substrate Preparation and MOSFET Fabricationfor Electron Mobility Evaluation” 2001 IEEE SOI Conference Digest,October 2001, pp. 13-14.

Strained lattice layer 40 can be large polycrystalline ormonocrystalline. If strained lattice layer 40 is polycrystalline, thecrystals of layer 40 can be large and in a one-to-one relationship withthe large crystals of a polycrystalline relaxed crystalline layer 26.Strained lattice layer 40 is preferably monocrystalline over theindividual blocks 18.

The strained crystalline lattice of layer 40 can improve mobility ofcarriers relative to the material 26 having a relaxed crystallinelattice. However, it is to be understood that layer 40 is optional invarious aspects of the invention.

Each of islands 18 can be considered to be associated with a separateactive region 42, 44 and 46. The active regions can be separated fromone another by insulative material subsequently formed through layers 26and 40 (not shown). For instance, a trenched isolation region can beformed through layers 26 and 40 by initially forming a trench extendingthrough layers 26 and 40 to insulative material 14, and subsequentlyfilling the trench with an appropriate insulative material such as, forexample, silicon dioxide.

As discussed previously, crystalline material 26 can be a single crystalextending across an entirety of the construction 10 comprising the shownfragment, and accordingly extending across all of the shown activeregions. Alternatively, crystalline material 26 can be polycrystalline.If crystalline material 26 is polycrystalline, the single crystals ofthe polycrystalline material will preferably be large enough so thatonly one single crystal extends across the majority of a given activeregion, and preferably so that only one single crystal extends acrossthe entirety of a given active region. In other words, active region 42will preferably comprise a single crystal of material 26, active region44 will comprise a single crystal of the material, and active region 46will comprise a single crystal of the material, with the single crystalsbeing separate and discrete relative to one another.

FIG. 9 shows an expanded view of active region 44 at a processing stagesubsequent to that of FIG. 8, and specifically shows a field effecttransistor device 50 associated with active region 44 and supported bycrystalline material 26.

Transistor device 50 comprises a dielectric material 52 formed overstrained lattice 40, and a gate 54 formed over dielectric material 52.Dielectric material 52 typically comprises silicon dioxide, and gate 54typically comprises a stack including an appropriate conductivematerial, such as, for example, conductively-doped silicon and/or metal.

A channel region 56 is beneath gate 54, and in the shown constructionextends across strained crystalline lattice material 40. The channelregion may also extend into relaxed crystalline lattice material 26 (asshown). Channel region 56 is doped with a p-type dopant.

Transistor construction 50 additionally comprises source/drain regions58 which are separated from one another by channel region 56, and whichare doped with n-type dopant to an n+concentration (typically, aconcentration of at least 10²¹ atoms/cm³). In the shown construction,source/drain regions 58 extend across strained lattice layer 40 and intorelaxed lattice material 26. Although source/drain regions 58 are shownextending only partially through relaxed lattice layer 26, it is to beunderstood that the invention encompasses other embodiments (not shown)in which the source/drain regions extend all the way through relaxedmaterial 26 and to material 16.

Channel region 56 and source/drain regions 58 can be formed byimplanting the appropriate dopants into crystalline materials 26 and 40.The dopants can be activated by rapid thermal activation (RTA), whichcan aid in keeping the thermal budget low for fabrication of fieldeffect transistor 50.

An active region of transistor device 50 extends across source/drainregions 58 and channel region 56. Preferably the majority of the portionof the active region within crystalline material 26 is associated withonly one single crystal of material 26. More preferably an entirety ofthe portion of the active region within crystalline material 26 isassociated with only one single crystal of material 26. Such can beaccomplished by having material 26 be entirely monocrystalline.Alternatively, material 26 can be polycrystalline and comprise anindividual single grain which accommodates the entire portion of theactive region that is within material 26. The portion of strainedlattice material 40 that is encompassed by the active region ispreferably a single crystal, and can, in particular aspects, beconsidered an extension of the single crystal of the relaxed latticematerial 26 of the active region.

Crystalline materials 40 and 26 can, together with any crystallinestructures remaining in material 16, have a total thickness of less thanor equal to about 2000 Å. Accordingly the crystalline material cancorrespond to a thin film formed over an insulative material. Theinsulative material can be considered to be insulative layer 14 alone,or a combination of insulative layer 14 and oxidized portions ofmaterial 16.

The transistor structure 50 of FIG. 9 corresponds to an n-type fieldeffect transistor (NFET), and in such construction it can beadvantageous to have strained crystalline material 40 consist of astrained silicon material having appropriate dopants therein. Thestrained silicon material can improve mobility of electrons throughchannel region 56, which can improve performance of the NFET devicerelative to a device lacking the strained silicon lattice. Although itcan be preferred that strained lattice material 40 comprise silicon inan NFET device, it is to be understood that the strained lattice canalso comprise other semiconductive materials. A strained silicon latticecan be formed by various methods. For instance, strained silicon couldbe developed by various means and lattice 40 could be created by latticemismatch with other materials or by geometric conformal latticestraining on another substrate (mechanical stress).

As mentioned above, strained lattice 40 can comprise other materialsalternatively to, or additionally to, silicon. The strained lattice can,for example, comprise a combination of silicon and germanium. There canbe advantages to utilizing the strained crystalline lattice comprisingsilicon and germanium relative to structures lacking any strainedlattice. However, it is generally most preferable if the strainedlattice consists of silicon alone (or doped silicon), rather than acombination of silicon and germanium for an NFET device.

A pair of sidewall spacers 60 are shown formed along sidewalls of gate54, and an insulative mass 62 is shown extending over gate 54 andmaterial 40. Conductive interconnects 63 and 64 extend through theinsulative mass 62 to electrically connect with source/drain regions 58.Interconnects 63 and 64 can be utilized for electrically connectingtransistor construction 50 with other circuitry external to transistorconstruction 50. Such other circuitry can include, for example, abitline and a capacitor in applications in which construction 50 isincorporated into dynamic random access memory (DRAM).

FIG. 10 shows construction 10 at a processing stage subsequent to thatof FIG. 9, and shows a capacitor structure 90 formed over and inelectrical contact with conductive interconnect 64. The shown capacitorstructure extends across gate 54 and interconnect 63.

Capacitor construction 90 comprises a first capacitor electrode 92, asecond capacitor electrode 94, and a dielectric material 96 betweencapacitor electrodes 92 and 94. Capacitor electrodes 92 and 94 cancomprise any appropriate conductive material, including, for example,conductively-doped silicon. In particular aspects, electrodes 92 and 94will each comprise n-type doped silicon, such as, for example,polycrystalline silicon doped to a concentration of at least about 10²¹atoms/cm³ with n-type dopant. In a particular aspect of the invention,electrode 92, conductive interconnect 64 and the source/drain region 58electrically connected with interconnect 64 comprise, or consist of,n-type doped semiconductive material. Accordingly, n-type dopedsemiconductive material extends from the source/drain region, throughthe interconnect, and through the capacitor electrode.

Dielectric material 96 can comprise any suitable material, orcombination of materials. Exemplary materials suitable for dielectric106 are high dielectric constant materials including, for example,silicon nitride, aluminum oxide, TiO₂, Ta₂O₅, ZrO₂, etc.

The conductive interconnect 63 is in electrical connection with abitline 97. Top capacitor electrode 94 is shown in electrical connectionwith an interconnect 98, which in turn connects with a reference voltage99, which can, in particular aspects, be ground. The construction ofFIG. 10 can be considered a DRAM cell, and such can be incorporated intoan electronic system (such as, for example, a computer system) as amemory device.

FIG. 11 shows construction 10 at a processing stage subsequent to thatof FIG. 8 and alternative to that described previously with reference toFIG. 9. In referring to FIG. 11, similar numbering will be used as isused above in describing FIG. 9, where appropriate.

A transistor construction 70 is shown in FIG. 11, and such constructiondiffers from the construction 50 described above with reference to FIG.9 in that construction 70 is a p-type field effect transistor (PFET)rather than the NFET of FIG. 9. Transistor device 70 comprises an n-typedoped channel region 72 and p+ doped source/drain regions 74. In otherwords, the channel region and source/drain regions of transistor device70 are oppositely doped relative to the channel region and source/drainregions described above with reference to the NFET device 50 of FIG. 9.

The strained crystalline lattice material 40 of the PFET device 70 canconsist of appropriately doped silicon, or consist of appropriatelydoped silicon/germanium. It can be most advantageous if the strainedcrystalline lattice material 40 comprises appropriately dopedsilicon/germanium in a PFET construction, in that silicon/germanium canbe a more effective carrier of holes with higher mobility than issilicon without germanium.

Devices similar to the transistor devices discussed above (NFET device50 of FIG. 9, and PFET device 70 of FIG. 11) can be utilized in numerousconstructions. Exemplary constructions are described in the FIGS. 12-23that follow.

FIGS. 12-14 illustrate three exemplary inverter constructions in whichan n-channel device is formed over a p-channel device. Many componentsof the inverters of FIGS. 12-14 are identical to one another, andidentical numbering will be utilized in describing the embodiments ofFIGS. 12-14, where appropriate.

FIG. 12 illustrates an inverter structure 200, FIG. 13 illustrates aninverter construction 100, and FIG. 14 illustrates an inverterconstruction 250. Each of the inverters comprises an NFET device 50stacked over a PFET device (202 in FIG. 12, 102 in FIG. 13 and 252 inFIG. 14), although it is to be understood that the elevational order ofthe PFET and NFET devices can be reversed in other aspects of theinvention (not shown).

Constructions 100 (FIG. 12), 200 (FIG. 13) and 250 (FIG. 14) allcomprise PFET devices containing transistor gates 112, insulative pads114, sidewall spacers 116 and source/drain regions 118. Gates 112 cancomprise any suitable construction, and in particular aspects willcomprise one or more of conductively-doped silicon, metal, and metalcompounds (such as, for example, metal silicides). Dielectric materials114 can comprise, for example, silicon dioxide. Sidewall spacers 116 cancomprise, for example, one or both of silicon dioxide and siliconnitride.

Constructions 100 (FIG. 12), 200 (FIG. 13) and 250 (FIG. 14) comprise aninsulative material 120 over the PFET devices (102, 202 or 252), andover the substrate underlying the PFET devices. Material 120 cancomprise any suitable material, including, for example,borophosphosilicate glass (BPSG) and/or silicon dioxide.

A construction 122 comprising the NFET device 50 (of the type describedabove with reference to FIG. 9) is formed over insulative material 120.More specifically, construction 122 includes layers 16, 26 and 40,together with transistor gate 54. Layer 16 is preferably electricallyconductive, and in the shown application is p-type doped. Layer 16 canconsist essentially of, or consist of, a silicon seed material togetherwith an appropriate dopant. It is noted that in the discussion of FIGS.3-8 it was indicated that material 16 could be oxidized during formationof crystalline materials thereover. In embodiments of the type shown inFIGS. 12-14 it can be preferred that material 16 not be appreciablyoxidized during the processing of FIGS. 3-8, but instead remain almostentirely as a non-oxidized form of silicon.

In particular aspects of the invention, layer 16 can be formed byepitaxial growth from a crystalline semiconductive material 144(discussed below). Accordingly, several steps of the process describedin FIGS. 3-8 for forming seed layer 16 can be replaced with an epitaxialgrowth of the seed layer. The seed layer 16 can be doped with anappropriate dopant utilizing, for example, an implant of the dopant.

Layers 26 and 40 can correspond to a relaxed crystalline latticematerial and a strained crystalline lattice material, respectively, asdiscussed previously with reference to FIGS. 3-9. The material 26 cancomprise, consist essentially of, or consist of appropriately dopedsilicon/germanium; and the layer 40 can comprise, consist essentiallyof, or consist of appropriately doped silicon, or can comprise, consistessentially of, or consist of appropriately doped silicon/germanium.

Layers 16, 26 and 40 can be considered to be crystalline layers, and inparticular aspects all of layers 16, 26 and 40 are crystalline, and canbe considered to together define a crystalline structure.

N-type doped source/drain regions 58 extend into layers 26 and 40. Inthe shown constructions, source/drain regions 58 of NFET device 50 aredirectly over and aligned with source/drain regions 118 of the PFETdevices (102, 202 and 252), and gate 54 of NFET device 50 is directlyover and aligned with the gates 112 of the PFET devices.

Although constructions 200 (FIG. 12), 100 (FIG. 13) and 250 (FIG. 14)contain PFET devices having similarities to one another, theconstructions also comprise differences amongst the PFET devices.

The PFET device 202 of construction 200 (FIG. 12) is supported by ablock 204 of semiconductive material extending into a p-type dopedsemiconductor substrate 206. Substrate 206 can comprise, for example,bulk monocrystalline p-doped silicon. Block 204 comprises a lower n-typedoped region 208 which can comprise, consist essentially of, or consistof n-type doped silicon such as, for example, an n-type doped regionformed as an ion-implanted well region over substrate 206. Block 204also comprises an upper n-type doped region 210 which is of highern-type impurity doping level than is region 208, and in the shownconstruction is illustrated as being an n region. Material 210 cancomprise, consist essentially of, or consist of n-type dopedsilicon/germanium, such as, for example, a single crystal-silicongermanium material epitaxially grown over layer 208. The source/drainregions 118 of device 202 are formed within the material 210 of block204 in construction 200. Source/drain regions 118 of device 202therefore can, in particular aspects, be considered to extend into thesilicon/germanium material 210 associated with block 204. The material210 is preferably a single crystal material, but it is to be understoodthat the material 210 can also be polycrystalline.

The PFET device 102 of construction 100 (FIG. 13) is shown supported bya substrate 104 comprising three discrete materials. A first material ofthe substrate is a p-type doped semiconductive material mass 106, suchas, for example, p-type doped monocrystalline silicon. Themonocrystalline silicon can be, for example, in the form of a bulksilicon wafer. The second portion of substrate 104 is an insulativematerial 108 formed over mass 106. Material 108 can comprise, forexample, silicon dioxide. The third portion of substrate 104 is a layer110 of semiconductive material. Such material can comprise, for example,silicon, or a combination of silicon and germanium. Material 110 cancorrespond to a thin film of semiconductive material, and accordinglylayers 110 and 108 can be considered to correspond to asemiconductor-on-insulator construction. Semiconductive material 110 isdoped with n-type dopant. Source/drain regions 118 extend intosemiconductive material 110. Accordingly, in the shown embodimentsource/drain regions 118 can be considered to extend into a thin film ofan SOI construction. A channel region 115 is within n-type dopedsemiconductive material 110, and between source/drain regions 118.

The PFET device 252 of construction 250 (FIG. 14) is supported by asubstrate 254 similar to the substrate 104 of FIG. 13. Substrate 254differs from the substrate 104 in that a conductive film 256 iscomprised by substrate 254 and not shown as part of substrate 104 (FIG.13). Film 256 can comprise any suitable electrically conductivematerial, including, for example, metal and/or metal compound. Film 256can be a ground connection, and accordingly layers comparable to 256would typically be present in other constructions of this disclosure,even though the layers are not specifically illustrated.

The inverter constructions 200, 100 and 250 of FIGS. 12-14 can functionas basic CMOS devices. Specifically, transistor devices 202,102 and 252correspond to PFET devices and transistor devices 50 correspond to NFETdevices. One of source/drain regions 58 of the NFET devices areelectrically connected with ground 130 (through interconnects 129 shownin dashed line) and the other are electrically connected with outputs132 (through interconnects 140 shown in dashed line). The groundinterconnects 129 also connect to the NFET body nodes 16/26 as shown.Gates 54 of the NFET devices are electrically connected with inputs 134,and are also electrically tied to gates 112 of the PFET devices throughinterconnects 136 (shown in dashed line). One of source/drain regions118 of devices 202, 102 and 252 is connected with V_(DD) 138 (through aninterconnect 137 shown in dashed line), and the other source/drainregion 118 as well as the n-type bodies of the PFETs are electricallyconnected with source/drain regions 58 of devices 50 throughinterconnects 140.

Interconnects 136 are illustrated extending around layers 16, 26 and 40of constructions 122. Interconnects 136 do not physically connect layers16, 26 and 40. Interconnects 136 connect the extensions of gates 112 and54 in the non-active regions into or out of the page (the non-activeregions are not shown in the cross-sectional views of FIG. 12-14). Suchcan be accomplished by conventional interconnect/via technology.

Interconnects 140 are shown schematically to connect the electricalnodes of the n-type body of the bottom PFETs, one of the source/drain p+nodes 118 of the bottom PFETs, and one of the n+ nodes 40/58 of thesource/drains of the top NFETs. It is to be understood that the twop-type doped regions 142/144 resistively connect one of the source/drainnodes of the bottom PFETs to the p-type body 16/26/56 of the top NFETs.

Regions 142 and 144 can be considered to be separate portions of p-typedoped vertical layers (i.e., vertically extending layers), or can beconsidered to be separate vertical layers. Portion 142 is shown to bemore heavily doped than is portion 144.

In the shown aspects of the invention, layer 16 comprises a p-type dopedsemiconductive material, such as, for example, p-type doped silicon.Also, it is noted that layer 16 is preferably either entirely one singlecrystal, or if layer 16 is polycrystalline, individual crystals arepreferably as large as the preferred individual crystals of layers 26and 40. One or both of the p-type doped semiconductor materials 16 and26 can be more heavily doped than one or both of the vertical layers 142and 144 between layer 16 and source/drain region 118 of theconstructions of FIGS. 12-14; or one or both of the materials 16 and 26can be comparably doped to one or both of layers 142 and 144 of thevertically extending pillars.

Another exemplary CMOS inverter construction 300 is shown in FIG. 15.Construction 300 includes a PFET device 302 stacked over an NFET device304. The PFET and NFET device share a transistor gate 306.

NFET device 304 is formed over a bulk substrate 308. Substrate 308 cancomprise, for example, a monocrystalline silicon wafer lightly-dopedwith a background p-type dopant.

A block 310 of p-type doped semiconductive material extends intosubstrate 308. Block 310 can comprise, for example, silicon/germanium,with the germanium being present to a concentration of from about 10atomic % to about 60 atomic %. The silicon/germanium of material 310 canhave a relaxed crystalline lattice in particular aspects of theinvention. Material 310 can be referred to as a first layer in thedescription which follows.

A second layer 312 is over first layer 310. Second layer 312 comprisesan appropriately-doped semiconductive material, and in particularapplications will comprise a strained crystalline lattice. Layer 312can, for example, comprise doped silicon/germanium having a strainedcrystalline lattice, with the germanium concentration being from about10 atomic % to about 60 atomic %.

Gate 306 is over layer 312, and separated from layer 312 by a dielectricmaterial 311. The dielectric material can comprise, for example, silicondioxide.

Gate 306 can comprise any appropriate conductive material, including,for example, conductively-doped semiconductor materials (such asconductively-doped silicon), metals, and metal-containing compositions.In particular aspects, gate 306 will comprise a stack of materials, suchas, for example, a stack comprising conductively-doped silicon andappropriate metal-containing compositions.

Source/drain regions 314 extend into layers 312 and 310. Thesource/drain regions are heavily doped with n-type dopant. In particularaspects, sidewall spacers (not shown) can be formed along sidewalls ofgate 306.

The shown source/drain regions 314 have a bottom periphery indicatingthat the regions include shallow portions 316 and deeper portions 318.The shallow portions 316 can correspond to, for example, lightly dopeddiffusion regions.

NFET device 304 comprises a p-type doped region beneath gate 306 andbetween source/drain regions 314. Such p-type doped region correspondsto a channel region 320 extending between source/drain regions 314.

An active region of NFET device 304 can be considered to includesource/drain regions 314 and the channel region between the source/drainregions. Such active region can, as shown, include a portion whichextends across layer 312, and another portion extending into layer 310.Preferably, the majority of the active region within portion 310 iscontained in a single crystal, and more preferably the entirety of theactive region within portion 310 is contained in a single crystal.Accordingly, the shown layer 310 is preferably monocrystalline orpolycrystalline with very large individual crystals. It can be furtherpreferred that the majority or even entirety of the active region withinlayer 312 also be contained within a single crystal, and accordingly itcan be preferred that layer 312 also be monocrystalline orpolycrystalline with very large individual crystals. Further, layer 312can be formed by epitaxial growth over layer 310, and accordingly layers312 and 310 can both be considered to be part of the same crystallinestructure. The entirety of the shown active region can thus be containedwithin only one single crystal that comprises both of layers 310 and312.

A dielectric material 322 is formed over gate 306. Dielectric material322 can comprise, for example, silicon dioxide.

A layer 324 is formed over dielectric material 322. Layer 324 can bereferred to as a third layer to distinguish layer 324 from first layer310 and second layer 312. Layer 324 can comprise, for example, acrystalline semiconductive material, such as, for example, crystallineSi/Ge. In particular aspects, layer 324 will be monocrystalline, andwill comprise appropriately-doped silicon/germanium. The germaniumcontent can be, for example, from about 10 atomic % to about 60 atomic%. In other aspects, layer 324 can be polycrystalline; and in someaspects layer 324 can be polycrystalline and have individual grainslarge enough so that an entirety of a portion of an active region ofPFET device 302 within layer 324 is within a single grain.

A fourth layer 326 is formed over layer 324. Layer 326 can comprise,consist essentially of, or consist of appropriately-doped semiconductivematerial, such as, for example, appropriately-doped silicon. In theshown embodiment, layers 324 and 326 are n-type doped (with layer 326being more lightly doped than layer 324), and layer 324 is incorporatedinto the PFET device 302.

Heavily-doped p-type source/drain regions 328 extend into layer 304.Source/drain regions 328 can be formed by, for example, an appropriateimplant into layer 324. Layer 324 is n-type doped between source/drainregions 328, and comprises a channel region 330 that extends betweensource/drain regions 328.

A conductive pillar 332 extends from source/drain region 314 to layer324, and accordingly electrically connects a source/drain region 314with substrate 324. Electrically conductive material 332 can comprise,for example, n-type doped semiconductive material, as shown.

An insulative material 334 is provided over substrate 308, and surroundsthe inverter comprising NFET device 304 and PFET device 302. Insulativematerial 334 can comprise, consist essentially of, or consist of anyappropriate insulative material, such as, for example,borophosphosilicate glass (BPSG), and/or silicon dioxide.

The inverter construction 300 of FIG. 15 can function as a basic CMOSlogic building block. One of the source/drain regions 314 of the NFETdevice and the body 310 are electrically connected with ground 340through interconnect 339 (shown in dashed line) and the othersource/drain region of the NFET is electrically connected with an output342 through interconnect 341 (shown in dashed line). Gate 306 iselectrically connected with an input 344 through interconnect 343 (shownin dashed line). One of the source/drain regions 328 of PFET device 302is connected with V_(DD) 346 through interconnect 345 (shown in dashedline), while the other is electrically connected to output 342 throughinterconnect 341. The n-body of the PFET is also connected to the outputinterconnect 341.

FIG. 16 illustrates an alternative embodiment inverter relative to thatdescribed above with reference to FIG. 15. Specifically, FIG. 16illustrates an inverter construction 400 comprising a PFET device 402stacked over an NFET device 404. The PFET and NFET devices share acommon gate 406.

Construction 400 comprises a substrate 408 and an insulator layer 410over the substrate. Substrate 408 and insulator 410 can comprise, forexample, the various materials described above with reference tosubstrate 12 and insulator 14 of FIG. 3.

A first layer 412, second layer 414 and third layer 416 are formed overinsulator 410. Layers 412, 414 and 416 can correspond to, for example,identical constructions as layers 16, 26 and 40, respectively, of FIG.9.

Layers 412, 414 and 416 can be initially doped with a p-type dopant.Subsequently, n-type dopant can be implanted into the layers to formheavily-doped source/drain regions 418.

A channel region 420 extends between source/drain regions 418, and undergate 406. An active region of the NFET device comprises source/drainregions 418 and channel region 420. Such active region includes aportion within layer 416, and another portion within layer 414.Preferably, the portion of the active region within layer 414 ispredominately or even entirely contained within a single crystal oflayer 414. A portion of the active region within layer 416 is preferablypredominately or entirely within a single crystal of layer 416.

A dielectric material 422 is formed over layer 416, and is providedbetween layer 416 and gate 406. Dielectric material 422 can comprise,for example, silicon dioxide.

Sidewall spacers (not shown) can be provided along sidewalls of gate406.

A second dielectric material 424 is provided over gate 406. Dielectricmaterial 424 can comprise, for example, silicon dioxide.

A layer 426 of semiconductive material is provided over dielectricmaterial 424, and a layer 428 of semiconductive material is providedover layer 426. Layer 426 can comprise, for example, appropriately-dopedsilicon/germanium, and layer 428 can comprise, for example,appropriately-doped silicon. Accordingly, layers 426 and 428 compriseconstructions identical to those described with reference to layers 324and 326 of FIG. 15.

A semiconductive material pillar 430 extends from layer 416 to layer426.

P-type doped source/drain regions 432 extend into layer 426.

A channel region 434 extends between source/drain regions 432, and abovegate 406.

An active region of the PFET device 402 includes source/drain regions432 and channel region 434. In particular embodiments, such activeregion is predominately or even entirely contained within a singlecrystal of silicon/germanium layer 426.

The inverter of construction 400 can function as a basic CMOS logicbuilding block. One of the source/drain regions 418 of the NFET deviceis electrically connected with ground 440 through interconnect 439(shown in dashed line) while the other is electrically connected with anoutput 442 through interconnect 441 (shown in dashed line). Substrate414 can also be connected to the ground interconnect 439, as shown. Gate406 is electrically connected with an input 444 through interconnect 443(shown in dashed line). One of the PFET source/drain regions 432 iselectrically connected with the output interconnect 441, and the otheris connected with V_(DD) 446 through interconnect 445 (shown in dashedline). The n-doped body of the PFET is also connected to the outputinterconnect 441.

FIGS. 17 and 18 show a semiconductor construction 500 comprising atransistor/resistor assembly that can be incorporated into variousaspects of the invention. Construction 500 includes a substrate 502having an insulative layer 504 formed thereover. Substrate 502 andinsulative layer 504 can comprise, for example, the materials describedpreviously with reference to substrate 12 and insulator layer 14,respectively.

A first crystalline layer 506, second crystalline layer 508, and thirdcrystalline layer 510 are formed over insulative material 504. Layers506, 508 and 510 can correspond to a silicon seed layer, relaxedcrystalline lattice layer, and strained crystalline lattice layer,respectively. In particular aspects, layers 506, 508 and 510 cancomprise materials described previously for layers 16, 26 and 40,respectively.

A dielectric material 512 is over layer 510, and a transistor gate 514is over dielectric material 512. Dielectric material 512 can comprise,consist essentially of, or consist of silicon dioxide. Transistor gate514 can comprise, for example, one or more of metal andconductively-doped silicon; and can, for example, comprise materialsdescribed previously with reference to transistor gate 54.

A pair of source/drain regions 516 extend through strained crystallinelattice layer 510 and into relaxed crystalline lattice layer 508. Thesource/drain regions comprise a shallow portion 518, and a deeperportion 520.

A channel region 522 extends beneath gate 514, and between source/drainregions 516. An NFET transistor device comprises gate 514, source/drainregions 516 and channel region 522. Although the shown transistor deviceis an NFET device, it is to be understood that the invention encompassesother aspects (not shown) in which the transistor device is a PFETdevice.

Source/drain regions 516 and channel region 522 define an active regionof the transistor device. For reasons described previously, it can beadvantageous to have a majority, and preferably the entirety, of theportion of the active region within layer 508 contained within a singlecrystal of the crystalline material of layer 508; and it can also beadvantageous to have the majority or entirety of the portion of theactive region within layer 510 contained within a single crystal of thematerial 510.

The crystalline materials of layers 506, 508 and 510 can bemonocrystalline in order that an entirety of the active region withinsuch crystalline materials is within single crystals of the materials.Alternatively, the materials can be polycrystalline, with individualsingle crystals being large enough to accommodate an entirety of theportion of the active region extending within the various materials. Inparticular aspects, layers 508 and 510 will be extensions of acrystalline lattice defined by material 506. In such aspects, anentirety of the active region of the transistor device will preferablyextend within only a single crystal encompassing materials 506, 508 and510.

A conductive pillar 530 is formed in electrical connection with one ofthe source/drain regions 516. In the shown embodiment, pillar 530comprises n-type doped silicon, and is formed in physical contact withan upper surface of layer 510.

A pair of crystalline materials 532 and 534 are formed over pillar 530.In the shown aspect of the invention, pillar 530 comprises an uppersurface 531, and layer 532 is formed physically against such uppersurface.

An electrical node 536 is formed at a location distant from conductivepillar 530, and crystalline materials 532 and 534 extend between node136 and pillar 530. Crystalline materials 532 and 534 together define aresistor 535 extending between a first electrical node defined by pillar530, and a second electrical node defined by the shown node 536.

Crystalline materials 532 and 534 may or may not comprise differentcompositions from one another. Crystalline material 532 can comprise,consist essentially of, or consist of p-type doped silicon; andcrystalline material 534 can comprise, consist essentially of, orconsist of p-type doped silicon/germanium. Alternatively, the two layerscan be replaced with a single layer of either p-doped silicon or p-dopedsilicon/germanium.

An insulative material (or mass) 540 is over gate 514, and resistor 535is separated from gate 514 by the insulative material.

Construction 500 includes a contact 566 extending from a source/drainregion 516, through an opening in resistor 535 (the opening has aperiphery 542), and to an interconnect 552 which electrically connectswith ground (not shown). Construction 500 also includes a contact 564(shown in phantom view in FIG. 17 as it is behind the cross-section ofFIG. 17). Contact 564 extends to node 536. An interconnect 550 (shown inphantom view in the cross-section of FIG. 17) extends between contact564 and V_(DD) (not shown in FIG. 17). In particular aspects, node 536can be considered to be part of the electrical connection to V_(DD).

FIG. 18 illustrates a top view of construction 500, with insulative mass540 not being shown in FIG. 18 to aid in clarity of the illustration.Gate 514 is part of a conductive line 560, which is connected thoroughan electrical stud 562 to other circuitry.

Resistor 535 is shown comprising a “L” shape having an opening extendingtherethrough for passage of contact 566. Resistor 535 is shown tocomprise an outer surface 544, and an inner surface 542. The innersurface 542 defines the periphery of the opening around the contact 566.The shown geometry of the resistor is but one exemplary form of theresistor and it is to be understood that the resistor can have othergeometries.

Particular aspects of the present invention pertain to formation of SRAMconstructions. The SRAM constructions can be, for example, sixtransistor constructions having the basic schematic layout of the typedescribed with reference to FIG. 1, or can be four transistorconstructions having the basic schematic layout of the type describedwith reference to FIG. 2. If the SRAM constructions are four transistorconstructions, the resistors utilized in the constructions (i.e., theresistors 784 and 786 of FIG. 2) can be conventional resistors, or canbe resistors of the type described with reference to FIG. 17 as aresistor 535.

An exemplary four transistor SRAM construction 250 with load resistorsis illustrated in FIGS. 19 and 20.

Referring to FIGS. 19 and 20, similar numbering will be utilized as wasused above in describing prior art FIG. 2, where appropriate. FIG. 19shows bitlines 752 and 754 extending vertically through an exemplarySRAM construction 550, and shows V_(SS) line 715 and V_(CC) line 711extending substantially horizontally through the SRAM construction.Additionally, wordline 756 is shown extending substantially horizontallythrough the construction.

Access devices 790 and 792 are diagrammatically illustrated alongwordline 756. Access device 790 has a diffusion region which extends toa common node 768, and also has a diffusion region extending to aninterconnect 552 which connects to bitline 752. Similarly, device 792has a diffusion region on one side which extends to common node 772, anda diffusion region on the other side which connects to an interconnect554 extending to bitline 754.

The SRAM construction 550 comprises a pair of load resistors 784 and 786which connect to V_(CC) at interconnects 556 and 558, respectively.

Construction 550 also comprises gate lines 560 and 562 extendingsubstantially vertically and beneath resistors 784 and 786,respectively. The gate lines comprise devices 780 and 782, and suchdevices are shown diagrammatically by circles along the lines 560 and562. Device 780 has a diffusion region extending to common node 768, andalso has a diffusion region extending to an interconnect 564 whichconnects with V_(SS) 715. Similarly, device 782 comprises a source/drainregion extending to common node 772, and also comprises a source/drainregion extending to an interconnect 566 which connects with V_(SS) (orground) 715.

Gate line 560 is shown connected to common diffusion region 772 throughan interconnect 776, and gate line 562 is shown connected to commondiffusion region 768 through an interconnect 774.

The various lines of the 550 construction are at at least threedifferent elevational levels. Specifically, wordline 756, and gate lines560 and 562 typically consist essentially of conductively-dopedpolysilicon and are at a first elevational level over a substrate.V_(CC) line 711, ground line 715, and interconnects 774 and 776 aretypically metal-containing materials formed at a second elevationallevel above the first elevational level, and can correspond to so-calledmetal one (M1) materials. Bitlines 752 and 754 are formed at a thirdelevational level above the second elevational level, typically comprisemetal, and can correspond to so-called metal two (M2) lines.Cross-hatching is utilized to indicate the lines of the M1 level.

An electrically insulative material would be formed over and around thevarious lines of the FIG. 19 construction. Such insulative material isnot shown in FIG. 19 to simplify the drawing. FIG. 20 shows across-sectional view of the FIG. 19 construction, and illustrates theelevational relationships of various components of the FIG. 19construction. FIG. 20 also shows the electrically insulative material(labeled as 580) extending around the various components of the FIG. 19construction.

FIG. 20 shows construction 550 formed in association with a substrate 12and insulative material 14, which can comprise the same construction asdescribed above with reference to FIG. 3. Additionally, insulativematerial 580 is shown formed over substrate 14, and semiconductivematerials 582 and 584 are formed on the insulative isolation material.Insulative isolation material 580 can comprise, for example, silicondioxide, borophosphosilicate glass, or any other suitable electricallyinsulative material. Additionally, although material 580 is showncomprising a single homogenous material, it is to be understood thatmaterial 580 can comprise various layers of insulative materials inother aspects of the invention (not shown).

Semiconductive materials 582 and 584 are shown to be background p-typedoped. Materials 582 and 584 can comprise, for example,silicon/germanium having a relaxed crystalline lattice. Materials 586and 588 are shown formed over materials 582 and 584, respectively.Materials 586 and 588 can comprise, for example, silicon orsilicon/germanium having a strained crystalline lattice. Accordingly,materials 582 and 584 can be analogous to the layer 26 describedpreviously with reference to FIGS. 1-9, and layers 586 and 588 can beanalogous to the layers 40 described previously with reference to FIGS.1-9. It is to be understood, however, that the shown materials areexemplary materials, and that other semiconductive materials can beutilized in place of materials 582, 584, 586 and 588.

Source/drain diffusion regions 590 and 592 extend into materials 584 and588; and source/drain diffusion regions 594 and 596 extend intomaterials 582 and 586. The source/drain diffusion regions 590, 592, 594and 596 are illustrated to be n-type conductively doped. Gate lines 560and 562 are shown extending over materials 588 and 586, respectively,and separated from such materials by insulative dielectric material.Gate line 560 comprises device 780, which gatedly connects diffusionregions 590 and 592. Similarly, gate line 562 comprises device 782,which gatedly connects source-drain regions 594 and 596.

Source/drain regions 592 and 594 are shown in electrical connection withresistors 784 and 786, respectively, through conductive pedestals 593and 595. Source/drain regions 590 and 596 are shown electricallyconnected with V_(CC) 711 through interconnects 556 and 558,respectively.

The bit lines 752 and 754 are shown extending over the metal one layer711 and accordingly are shown corresponding to a metal two layer.

An exemplary six transistor SRAM construction 800 is illustrated in FIG.21. In describing the construction of FIG. 21, similar numbering will beutilized as was used in describing the prior art construction of FIG. 1.The SRAM construction 800 includes bitlines 734 and 736, and includeswordline 738. The construction also includes the V_(CC) line 711 and theV_(SS) (or ground) line 715.

A gate of the access transistor 730 is diagrammatically illustrated witha circle at one location of wordline 738, and a gate of the accesstransistor 732 is diagrammatically illustrated with another circle atanother location of wordline 738. An interconnect 802 is provided wherea source/drain region of access transistor device 730 connects tobitline 734, and another interconnect 804 is provided where asource/drain region of access device 732 connects with bitline 736.Bitlines 734 and 736 extend vertically, while the wordline 738 accessingthe SRAM cell extends horizontally in the shown construction of FIG. 21.

Lines 725 and 727 extend vertically in the view of FIG. 21. A gate ofNFET device 716 is shown diagrammatically with a circle at one locationof line 725, and a gate of PFET device 718 is shown diagrammaticallywith another circle at another location of line 725. Similarly, a gateof NFET device 717 is shown diagrammatically at one location of line727, and a gate of PFET device 719 is shown diagrammatically at anotherlocation of line 727. Lines 725 and 727 together represent the gates ofthe four transistor core (two NFET-PFET pairs) of the SRAM cell.

Common node 731 represents the output node for CMOS inverter 718, andcommon node 733 represents the output node of the CMOS inverter 719.Common node 731 is tied to gate 727 through an interconnect 810, andcommon node 733 is shown tied to gate 725 through an interconnect 812.

A border 814 defining a shape of a backwards “F” is provided to show anapproximate boundary of the active regions of devices 730, 716 and 718.Similarly, a border 816 having a shape of a “F” is provided to show theapproximate borders of the active regions of devices 732, 717 and 719.Additionally, a dashed line 818 is provided to show the approximatelocation of an n-well. Accordingly, the portions of the active regionswithin the border of dashed line 818 are active regions corresponding toPFET devices, whereas the active regions outside of the region boundedby dashed line 818 correspond to active regions of NFET devices.

An interconnection between ground line 715 and a source/drain regionassociated with device 716 occurs at location 820, and an interconnectbetween ground line 715 and a source/drain region of device 717 occursat location 822. Also, an interconnection between V_(CC) line 711 and asource/drain region associated with PFET device 718 occurs at location824, and an interconnection between V_(CC) line 711 and a source/drainregion associated with PFET 719 occurs at location 826.

Various of the transistor devices of construction 800, (in particularaspects, all of the transistor devices of construction 800) can comprisethe structures described with reference to FIGS. 9 and 11 (i.e., cancomprise transistor constructions having active regions extending intosilicon/germanium; and preferably having a majority, or even anentirety, of the active region within the silicon/germanium beingcontained within a single crystal of the silicon/germanium, as well ascontaining other preferred aspects described with reference to FIGS. 9and 11). Further, the CMOS pairs (i.e., the paired devices 716 and 718,and the paired devices 717 and 719), can comprise constructions of thetypes described with reference to FIGS. 12-16 above.

The construction of FIG. 21 comprises several layers of conductivelines, with the bitlines typically corresponding to a so-called metal 2layer; the ground line and V_(CC) line corresponding to a so-calledmetal 1 layer (and indicated with cross-hatching to show that they areat a different level than the bitlines); the connection between regions733 and 812, as well as the connection between 731 and 810 correspondingto so-called metal 1 layers; and lines 738, 725 and 727 being heavilydoped polysilicon gate lines below the metal 1 layers.

Although some stacking is utilized in forming construction 800,significantly more stacking can be utilized in various aspects of theinvention, as described below with reference to FIGS. 22 and 23. Theconstruction of FIG. 21 will accordingly typically comprisesignificantly more semiconductor real estate than will more highlystacked constructions. The construction of FIG. 21 would typically be a100 F² cell, or larger (where F corresponds to the minimum feature sizeachievable with the processing utilized to form the SRAM cell).

Referring next to FIG. 22, an SRAM construction more stacked than thatof FIG. 21 is illustrated. The stacked configuration of FIG. 22 can beaccomplished utilizing, for example, one or more of the stacked CMOSconfigurations of FIGS. 15 and 16. In referring to FIG. 22, similarnumbering will be used as was utilized in describing the prior art ofFIG. 1.

FIG. 22 shows a construction 900 comprising bitlines 734 and 736, andalso comprising wordline 738. V_(CC) line 711 and V_(SS) line 715 passthrough the construction.

The gates of access transistors 730 and 732 are diagrammaticallyillustrated along wordline 738. Additionally, the node 713 isillustrated where bitline 734 connects with a diffusion region of accesstransistor 730, and the node 721 is shown where bitline 736 connectswith the diffusion region of access transistor 732.

A pair of common gate lines 902 and 904 are shown within construction900. Gate line 902 comprises the gates of devices 716 and 718, and line904 comprises the gates of devices 717 and 719.

Common node contact 731 concurrently connects internal diffusion nodesof the inverter devices 716 and 718 with that of the access transistor730. Similarly, common node contact 733 connects internal diffusionnodes of the inverter devices 717 and 719 with that of the accesstransistor 732. Gate line 902 is connected to node contact 733 throughinterconnect 724; and gate line 904 is connected to node 731 throughinterconnect 726.

A common contact 910 serves to connect the common n+ diffusion region ofthe two driver NFETs with the ground line 716. Similarly, a commoncontact 912 serves to connect the common p+ diffusion region of the twoload PFETs with the V_(CC) line 711.

A rectangular boundary 930 extends around the active regions of devices718 and 719 (the bottom PFETs), the NFET driver devices 716 and 717being stacked, respectively, on 718 and 719 employing common gates 902and 904. It is noted that the active regions associated with wordline738 would be elevationally above the active regions of devicesassociated with common gates 902 and 904. Wordline 738 corresponds tothe common gate of access device pairs 730 and 732 and consists of an n+doped second level of polysilicon line. The dashed lines 932 and 934correspond to the internal peripheries of active regions associated withaccess devices 730 and 732. The elevational difference between the threeactive regions: PFET load devices, NFET driver devices and NFET accessdevices are described in more detail with reference to FIG. 23 (below).

The stacked configuration of FIG. 22 can allow an SRAM cell to be formedwithin a significantly smaller footprint than could the device of FIG.21. For instance, the SRAM of FIG. 22 can be formed in a footprint thatis 50 F² or less (where F corresponds to the minimum feature sizeachievable with the processing utilized to form the SRAM cell).

Referring next to FIG. 23, a fragment 1000 of an SRAM construction isshown in cross-sectional view. Similar numbering will be utilized todescribe fragment 1000 as was used in describing FIGS. 1-22 above, whereappropriate. Fragment 1000 comprises a substrate 12 and an insulativematerial 14 over the substrate. Substrate 12 and insulative material 14can comprise the same materials as described previously with referenceto FIG. 3.

Fragment 1000 comprises the seed layer 16, silicon/germanium layer 26having a relaxed crystalline lattice, and layer 40 having a strainedcrystalline lattice that were described previously in this disclosure.The materials 26 and 40 can correspond to, for example, the materials 26and 40 described above with reference to FIG. 11. Layer 16 can comprise,consist essentially of, or consist of doped silicon.

P-type doped diffusion regions 1002,1004 and 1006 are formed to extendinto layers 26 and 40 to serve as source/drain regions for PFET devices.

Conductive gates 1008 and 1010 are over material 40, and spaced frommaterial 40 by an insulative material 1012. Insulative material 1012 cancomprise, for example, silicon dioxide.

A semiconductive material 1014 is over gates 1008 and 1010.Semiconductive material 1014 is background doped with p-type dopant.N-type diffusion regions 1016, 1018, and 1020 extend into semiconductivematerial 1014 to serve as source/drain regions for NFET devices. Thep+region 1004 is isolated from the n+ region 1018 with insulativematerial (typically silicon dioxide) 1012, to provide isolation betweenthe V_(CC) line (711 of FIG. 22) and the ground line (715 of FIG. 22).Regions 1002 and 1016 are electrically connected through aninterconnecting conductive material 1021 (and correspond to a conductivenode), and regions 1020 and 1006 are electrically connected through aninterconnecting conductive material 1019 (and correspond to a commonnode).

Gate 1008 together with source/drain regions 1002, 1004, 1016 and 1018corresponds to a CMOS construction utilizing a common gate of the typedescribed with reference to FIGS. 15 and 16. Similarly, gate 1010together with source/drain regions 1004, 1006, 1018 and 1020 correspondsto a CMOS utilizing a common gate analogous to the constructionsdescribed above with reference to FIGS. 15 and 16.

The gate 1008 can be considered to be part of a first invertercomprising a first NFET device and a first PFET device, and the gate1010 can be considered to be part of a second inverter comprising asecond NFET device and a second PFET device. Specifically, gate 1008 canbe considered a first transistor gate common to the first NFET and PFETdevices (with the first PFET device comprising source/drain regions 1002and 1004; and the first NFET device comprising source/drain regions 1016and 1018). The gate 1010 can be considered to be a second transistorgate common to the second NFET and PFET devices (with the second PFETdevice comprising source/drain regions 1004 and 1006; and the secondNFET device comprising source/drain regions 1018 and 1020). Thesource/drain region 1004 is a p-type region shared between the first andsecond PFET devices, and the source/drain region 1018 is an n-typeregion shared between the first and second NFET devices. In the shownconstruction, the first and second inverters are comprised by an SOIconstruction.

An insulative material 1030 is provided over semiconductive material1014. Insulative material 1030 can comprise any suitable electricallyinsulative material, or combination of electrical insulative layers, andin particular aspects will comprise SiO₂ or borophosphosilicate glass.

Semiconductive material strips 1032 and 1034 are formed to be surroundedby insulative material 1030. Semiconductive material strips 1032 and1034 comprise, in the shown embodiment, a seed layer 1036, a p-dopedsilicon/germanium layer 1038 having a relaxed crystalline lattice, and alayer 1040 having a strained crystalline lattice. Layers 1036, 1038 and1040 thus having compositions analogous to those of the layers 16, 26and 40 described above with reference to, for example, FIGS. 8, 9 and11, and accordingly can be formed utilizing processing analogous to thatdescribed above. The silicon/germanium material 1038 is shown to bep-type doped, and such corresponds to background doping in the material.Lines 1032 and 1034 comprise active regions for the NFET accesstransistors, and ultimately source/drain regions are formed in lines1032 and 1034. Such source/drain regions can comprise heavily n-typedoped regions (not shown in the cross-section of FIG. 23 as theheavily-doped regions would be outside of the plane of thecross-section).

An n+ doped polysilicon conductive line 1042 is formed over segments1032 and 1034, and separated from segments 1032 and 1034 by a thin gatedielectric. Ultimately, portions of line 1042 are utilized as gatestacks. Transistor devices are formed comprising common gate 1042 andsource/drain regions formed within segments 1032 and 1034.

An electrically insulative material 1044 is formed over line 1042, andconductive segments 1048 corresponding to a first layer of metal (metal1, or M1) is formed over the insulative material 1044. The material 1044can comprise, for example, borophosphosilicate glass, SiO₂ or othersuitable intermetallic dielectrics. Conductive lines 1050 and 1052 areformed over segment 1048. Lines 1050 and 1052 can correspond to metal 2(M2) layers. The conductive materials of lines 1048,1050 and 1052 cancomprise any suitable conductive material, including, for example,metal, metal compound, and/or conductively-doped silicon. Insulator 1046separates the metal 1 layer from the metal 2 layers.

The construction 1000 of FIG. 23 can be utilized in forming a stackedSRAM device analogous to that described above with reference to FIG. 22.Specifically, gates 1008 and 1010 can be formed corresponding to thelines 902 and 904, respectively. Accordingly, p+ source/drain region1004 can correspond to the region 912 of FIG. 22, and can be connectedto V_(CC). Similarly, n+ source/drain region 1018 can correspond to theregion 910 of FIG. 22, and can be connected with V_(SS). The regions1002, 1016 and a not shown n+ region for 1032 correspond to common node731, while the regions 1006,1020 and a not shown n+ diffusion region for1034 correspond to common node 733.

The line 1042 can correspond to wordline 738 of FIG. 22 and the segments1032 and 1034 can correspond to the active regions for the accesstransistors 730 and 732.

The segment 1048 corresponds to any of the metal 1 components of FIG.22, including, for example, the V_(SS) (or ground) line 715, the V_(CC)line 711, the interconnect 726, or the interconnect 724, for example.

The segments 1050 and 1052 can correspond to bitlines 734 and 736.

Utilization of a Si/Ge layer can improve performance of the devices ofthe present invention relative to prior art devices having source/drainregions extending into materials consisting of conductively-dopedsilicon. The performance of the devices can be further enhanced byutilizing a layer having a relaxed crystalline lattice in combinationwith a layer having a strained crystalline lattice for reasons such asthose discussed above with reference to FIGS. 1-9.

The various concepts described herein can be utilized to, among otherthings, achieve high density of memory devices, reduce costs associatedwith memory device fabrication, reduce power consumption of memorydevices, and enable fabrication of high performance SRAM designs on avariety of substrates.

Several of the figures show various different dopant levels, and utilizethe designations p+, p, p−, n−, n and n+ to distinguish the levels. Thedifference in dopant concentration between the regions identified asbeing p+, p, and p− are typically as follows. A p+ region has a dopantconcentration of at least about 10²⁰ atoms/cm³, a p region has a dopantconcentration of from about 10¹⁴ to about 10¹⁸ atoms/cm³, and a p−region has a dopant concentration in the order of or less than 10¹⁶atoms/cm³. It is noted that regions identified as being n−, n and n+will have dopant concentrations similar to those described aboverelative to the p−, p and p+ regions respectively, except, of course,the n regions will have an opposite-type conductivity enhancing dopanttherein than do the p regions.

The p+, p, and p− dopant levels are shown in the drawings only toillustrate differences in dopant concentration. It is noted that theterm “p” is utilized herein to refer to both a dopant type and arelative dopant concentration. To aid in interpretation of thisspecification and the claims that follow, the term “p” is to beunderstood as referring only to dopant type, and not to a relativedopant concentration, except when it is explicitly stated that the term“p” refers to a relative dopant concentration. Accordingly, for purposesof interpreting this disclosure and the claims that follow, it is to beunderstood that the term “p-type doped” refers to a dopant type of aregion and not a relative dopant level. Thus, a p-type doped region canbe doped to any of the p+, p, and p− dopant levels discussed above.Similarly, an n-type doped region can be doped to any of the n+, n, andn− dopant levels discussed above.

FIG. 24 illustrates generally, by way of example, but not by way oflimitation, an embodiment of a computer system 1400 according to anaspect of the present invention. Computer system 1400 includes a monitor1401 or other communication output device, a keyboard 1402 or othercommunication input device, and a motherboard 1404. Motherboard 1404 cancarry a microprocessor 1406 or other data processing unit, and at leastone memory device 1408. Memory device 1408 can comprise various aspectsof the invention described above, including, for example, one or more ofthe SRAM cells described with reference to FIGS. 19-23. Memory device1408 can comprise an array of memory cells, and such array can becoupled with addressing circuitry for accessing individual memory cellsin the array. Further, the memory cell array can be coupled to a readcircuit for reading data from the memory cells. The addressing and readcircuitry can be utilized for conveying information between memorydevice 1408 and processor 1406. Such is illustrated in the block diagramof the motherboard 1404 shown in FIG. 25. In such block diagram, theaddressing circuitry is illustrated as 1410 and the read circuitry isillustrated as 1412. Various components of computer system 1400,including processor 1406, can comprise one or more of the SRAMconstructions described with reference to FIGS. 19-23.

In particular aspects of the invention, processor device 1406 cancorrespond to a processor module, and associated random logic may beused in the implementation utilizing the teachings of the presentinvention.

In particular aspects of the invention, memory device 1408 cancorrespond to a memory module. For example, single in-line memorymodules (SIMMs) and dual in-line memory modules (DIMMs) may be used inthe implementation which utilize the teachings of the present invention.The memory device can be incorporated into any of a variety of designswhich provide different methods of reading from and writing to memorycells of the device. One such method is the page mode operation. Pagemode operations in a DRAM are defined by the method of accessing a rowof a memory cell arrays and randomly accessing different columns of thearray. Data stored at the row and column intersection can be read andoutput while that column is accessed.

An alternate type of device is the extended data output (EDO) memorywhich allows data stored at a memory array address to be available asoutput after the addressed column has been closed. This memory canincrease some communication speeds by allowing shorter access signalswithout reducing the time in which memory output data is available on amemory bus. Other alternative types of devices include SDRAM, DDR SDRAM,SLDRAM, VRAM and Direct RDRAM, as well as others such as SRAM or Flashmemories.

FIG. 26 illustrates a simplified block diagram of a high-levelorganization of various embodiments of an exemplary electronic system1700 of the present invention. System 1700 can correspond to, forexample, a computer system, a process control system, or any othersystem that employs a processor and associated memory. Electronic system1700 has functional elements, including a processor or arithmetic/logicunit (ALU) 1702, a control unit 1704, a memory device unit 1706 and aninput/output (I/O) device 1708. Generally, electronic system 1700 willhave a native set of instructions that specify operations to beperformed on data by the processor 1702 and other interactions betweenthe processor 1702, the memory device unit 1706 and the I/O devices1708. The control unit 1704 coordinates all operations of the processor1702, the memory device 1706 and the I/O devices 1708 by continuouslycycling through a set of operations that cause instructions to befetched from the memory device 1706 and executed. In variousembodiments, the memory device 1706 includes, but is not limited to,random access memory (RAM) devices, read-only memory (ROM) devices, andperipheral devices such as a floppy disk drive and a compact disk CD-ROMdrive. One of ordinary skill in the art will understand, upon readingand comprehending this disclosure, that any of the illustratedelectrical components are capable of being fabricated to include SRAMcells, DRAM cells and/or logic constructions in accordance with variousaspects of the present invention.

FIG. 27 is a simplified block diagram of a high-level organization ofvarious embodiments of an exemplary electronic system 1800. The system1800 includes a memory device 1802 that has an array of memory cells1804, address decoder 1806, row access circuitry 1808, column accesscircuitry 1810, read/write control circuitry 1812 for controllingoperations, and input/output circuitry 1814. The memory device 1802further includes power circuitry 1816, and sensors 1820, such as currentsensors for determining whether a memory cell is in a low-thresholdconducting state or in a high-threshold non-conducting state. Theillustrated power circuitry 1816 includes power supply circuitry 1880,circuitry 1882 for providing a reference voltage, circuitry 1884 forproviding the first wordline with pulses, circuitry 1886 for providingthe second wordline with pulses, and circuitry 1888 for providing thebitline with pulses. The system 1800 also includes a processor 1822, ormemory controller for memory accessing.

The memory device 1802 receives control signals 1824 from the processor1822 over wiring or metallization lines. The memory device 1802 is usedto store data which is accessed via I/O lines. It will be appreciated bythose skilled in the art that additional circuitry and control signalscan be provided, and that the memory device 1802 has been simplified tohelp focus on the invention. At least one of the processor 1822 ormemory device 1802 can include an SRAM cell and/or random logicconstruction of the type described previously in this disclosure.

The various illustrated systems of this disclosure are intended toprovide a general understanding of various applications for thecircuitry and structures of the present invention, and are not intendedto serve as a complete description of all the elements and features ofan electronic system using memory cells in accordance with aspects ofthe present invention. One of the ordinary skill in the art willunderstand that the various electronic systems can be fabricated insingle-package processing units, or even on a single semiconductor chip,in order to reduce the communication time between the processor and thememory device(s).

Applications for memory cells and logic constructions can includeelectronic systems for use in memory modules, device drivers, powermodules, communication modems, processor modules, andapplication-specific modules, and may include multilayer, multichipmodules. Such circuitry can further be a subcomponent of a variety ofelectronic systems, such as a clock, a television, a cell phone, apersonal computer, an automobile, an industrial control system, anaircraft, and others.

In compliance with the statute, the invention has been described inlanguage more or less specific as to structural and methodical features.It is to be understood, however, that the invention is not limited tothe specific features shown and described, since the means hereindisclosed comprise preferred forms of putting the invention into effect.The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1-44. (canceled)
 45. An SRAM construction comprising: a substrate; anelectrically insulative layer over the substrate; a firstsilicon/germanium layer over the electrically insulative layer, thefirst silicon/germanium layer being background n-type doped and having arelaxed crystalline lattice; a second silicon/germanium layer over anddirectly against the first silicon/germanium layer, the secondsilicon/germanium layer being background n-type doped and comprising astrained crystalline lattice; three p-type doped diffusion regionsextending through the second silicon/germanium layer and into the firstsilicon/germanium layer; the three p-type doped diffusion regions beinglaterally spaced from one another, and being a first p-type diffusionregion, a second p-type diffusion region and a third p-type diffusionregion, respectively; a first gate electrode above the p-type diffusionregions, and gatedly coupling the first and second p-type diffusionregions to one another, the first gate electrode comprising n-type dopedsilicon; a second gate electrode above the p-type diffusion regions, andgatedly coupling the second and third p-type diffusion regions to oneanother, the second gate electrode comprising n-type doped silicon; abackground p-type doped semiconductor layer over the first and secondgate electrodes; three n-type doped diffusion regions over the first andsecond gate electrodes and extending upwardly into the background p-typedoped semiconductor layer; the three n-type doped diffusion regionsbeing laterally spaced from one another, and being a first n-typediffusion region, a second n-type diffusion region and a third n-typediffusion region, respectively; the first and second n-type diffusionregions being gatedly coupled to one another by the first gateelectrode, and the second and third n-type diffusion regions beinggatedly coupled to one another by the second gate electrode; the first,second and third n-type diffusion regions being directly over the first,second and third p-type diffusion regions, respectively; a first p-typedoped electrical interconnect electrically connecting the first p-typediffusion region and first n-type diffusion region to one another; and asecond p-type doped electrical interconnect electrically connecting thesecond p-type diffusion region and second n-type diffusion region to oneanother.
 46. The SRAM construction of claim 45 wherein the substratecomprises a semiconductive material.
 47. The SRAM construction of claim45 wherein the substrate comprises glass.
 48. The SRAM construction ofclaim 45 wherein the substrate comprises aluminum oxide.
 49. The SRAMconstruction of claim 45 wherein the substrate comprises silicondioxide.
 50. The SRAM construction of claim 45 wherein the substratecomprises a metal.
 51. The SRAM construction of claim 45 wherein thesubstrate comprises a plastic.
 52. The SRAM construction of claim 45wherein the first p-type doped electrical interconnect extendsvertically from the first p-type diffusion region to the first n-typediffusion region.
 53. The SRAM construction of claim 45 wherein thesecond p-type doped electrical interconnect extends vertically from thesecond p-type diffusion region to the second n-type diffusion region.54. A electronic system, comprising: one or more SRAM devices;addressing circuitry coupled to the SRAM devices for accessing the SRAMdevices; a read circuit coupled to the SRAM devices for reading datafrom the SRAM devices; and wherein at least one of the SRAM devices ispart of a construction comprising: a substrate; an electricallyinsulative layer over the substrate; a first silicon/germanium layerover the electrically insulative layer, the first silicon/germaniumlayer being background n-type doped and having a relaxed crystallinelattice; a second silicon/germanium layer over and directly against thefirst silicon/germanium layer, the second silicon/germanium layer beingbackground n-type doped and comprising a strained crystalline lattice;three p-type doped diffusion regions extending through the secondsilicon/germanium layer and into the first silicon/germanium layer; thethree p-type doped diffusion regions being laterally spaced from oneanother, and being a first p-type diffusion region, a second p-typediffusion region and a third p-type diffusion region, respectively; afirst gate electrode above the p-type diffusion regions, and gatedlycoupling the first and second p-type diffusion regions to one another,the first gate electrode comprising n-type doped silicon; a second gateelectrode above the p-type diffusion regions, and gatedly coupling thesecond and third p-type diffusion regions to one another, the secondgate electrode comprising n-type doped silicon; a background p-typedoped semiconductor layer over the first and second gate electrodes;three n-type doped diffusion regions over the first and second gateelectrodes and extending upwardly into the background p-type dopedsemiconductor layer; the three n-type doped diffusion regions beinglaterally spaced from one another, and being a first n-type diffusionregion, a second n-type diffusion region and a third n-type diffusionregion, respectively; the first and second n-type diffusion regionsbeing gatedly coupled to one another by the first gate electrode, andthe second and third n-type diffusion regions being gatedly coupled toone another by the second gate electrode; the first, second and thirdn-type diffusion regions being directly over the first, second and thirdp-type diffusion regions, respectively; a first p-type doped electricalinterconnect extending vertically from the first p-type diffusion regionto the first n-type diffusion region; and a second p-type dopedelectrical interconnect extending vertically from the second p-typediffusion region to the second n-type diffusion region.
 55. Theelectronic system of claim 54 wherein the substrate comprises asemiconductive material.
 56. The electronic system of claim 54 whereinthe substrate comprises glass.
 57. The electronic system of claim 54wherein the substrate comprises aluminum oxide.
 58. The electronicsystem of claim 54 wherein the substrate comprises silicon dioxide. 59.The electronic system of claim 54 wherein the substrate comprises ametal.
 60. The electronic system of claim 54 wherein the substratecomprises a plastic.